Direct Fabrication of inkjet-printed dielectric film for metal–insulator–metal capacitors 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Direct Fabrication of inkjet-printed dielectric film for metal–insulator–metal capacitors 閱讀全文 »
Fully Inkjet-Printing of Metal-Polymer-Metal Multilayer on a Flexible Liquid Crystal Polymer Substrate 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Fully Inkjet-Printing of Metal-Polymer-Metal Multilayer on a Flexible Liquid Crystal Polymer Substrate 閱讀全文 »
A High Output Power and Low Phase Noise GaN HEMT VCO With Array of Switchable Inductors 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling A High Output Power and Low Phase Noise GaN HEMT VCO With Array of Switchable Inductors 閱讀全文 »
Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate 閱讀全文 »
RF Performance of in-situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-inch Silicon-on-Insulator (SOI) Substrate 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling RF Performance of in-situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-inch Silicon-on-Insulator (SOI) Substrate 閱讀全文 »
Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Effect of Body Bias and Temperature on Low-Frequency Noise in 40-nm nMOSFETs 閱讀全文 »
Improved Reverse Recovery Characteristics of Low Turn-On Voltage AlGaN/GaN Schottky Barrier Diodes with Anode Edge AlON Spacers 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Improved Reverse Recovery Characteristics of Low Turn-On Voltage AlGaN/GaN Schottky Barrier Diodes with Anode Edge AlON Spacers 閱讀全文 »
Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors 閱讀全文 »
Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation 閱讀全文 »
Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination 閱讀全文 »
