Improved Reverse Recovery Characteristics of Low Turn-On Voltage AlGaN/GaN Schottky Barrier Diodes with Anode Edge AlON Spacers

K.-P. Hsueh, L.-Y. Peng, Y.-H. Cheng, H.-Y. Wang, H.-C. Wang, H.-L. Kao, H.-C. Chiu, “Improved Reverse Recovery Characteristics of Low Turn-On Voltage AlGaN/GaN Schottky Barrier Diodes with Anode Edge AlON Spacers,” Journal of Alloys and Compounds, vol. 703, 2017, pp. 204–209. 2017/5/1