Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation

Y. C. Chiu, P. C. Chen, S. L. Chang, Z. W. Zheng, C. H. Cheng, G. L. Liou, H. L. Kao, Y. H. Wu, and C. Y. Chang, “Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation,” Electronic and Photonic Devices and Systems section of ECS Journal of Solid State Science and Technology, vol. 6, no. 4, 2017, pp. Q53-Q57. 2017/4/1

Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation

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