Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Y.-L. Hsieh, L.-B. Chang*, M.-J. Jeng, C.-Y. Li, C.-F. Shih, H.-T. Wang, Z.-X. Ding, C.-N. Chang, H.-Z. Lo and Y.-P. Chiang, “Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors,” Materials. vol. 13, issue. 21, pp. 1-16, JANUARY/FEBRUARY 2020. 2020/11/1