Reliability Studies on AlGaN/GaN High-Electron-Mobility Transistors with Through-substrate Via Technique and Backside Heat Sink Metal on Silicon-on-insulator Substrates

H.-C. Chiu, K.-P. Hsueh, H.-Y. Wang, H.-C. Wang, H.-L. Kao, F.-T. Chien, C.-T. Chen, and K.-J. Chang, “Reliability Studies on AlGaN/GaN High-Electron-Mobility Transistors with Through-substrate Via Technique and Backside Heat Sink Metal on Silicon-on-insulator Substrates,” Electronic and Photonic Devices and Systems section of the ECS Journal of Solid State Science and Technology, vol. 7, Issue 8, 2018, pp. Q142-147. 2018/8/1