Top 100 paper 中心公告, 期刊 Journal Paper, 陳始明 Dr. Tan, Cher Ming Physical Limitations of Phosphor layer thickness and co Top 100 paper 閱讀全文 »
The difference between reliability engineering and reliability science 期刊 Journal Paper, 陳始明 Dr. Tan, Cher Ming The difference between reliability engineering and reliability science 閱讀全文 »
Advanced interface materials 期刊 Journal Paper, 陳始明 Dr. Tan, Cher Ming Advanced interface materials 閱讀全文 »
Chung-Yi Li, Yuan-Ho Chen, Lu-An Lai, Wen-Chi Yeh, Jun Yang, “Simple and Hardware-efficient Row-based Direct-Mapping Estimators in Fixed-width Modified Booth Multipliers 期刊 Journal Paper Chung-Yi Li, Yuan-Ho Chen, Lu-An Lai, Wen-Chi Yeh, Jun Yang, “Simple and Hardware-efficient Row-based Direct-Mapping Estimators in Fixed-width Modified Booth Multipliers 閱讀全文 »
Pattern-Reconfigurable Dual-Band Dipole Antenna Array with Four Switchable Beams for Full Coverage in Horizontal Plane 期刊 Journal Paper Pattern-Reconfigurable Dual-Band Dipole Antenna Array with Four Switchable Beams for Full Coverage in Horizontal Plane 閱讀全文 »
CH Hsing, LDH Oanh, TC Chao, CC Lee, JH Hong, CC Cheng, CK Tseng, CJ Tung, MOSFET dose measurements for proton SOBP beam. Physica Medica 2021, 81, 185-190 期刊 Journal Paper, 趙自強 Dr. Chao TC CH Hsing, LDH Oanh, TC Chao, CC Lee, JH Hong, CC Cheng, CK Tseng, CJ Tung, MOSFET dose measurements for proton SOBP beam. Physica Medica 2021, 81, 185-190 閱讀全文 »
Y Chiang, CM Tan, CJ Tung, CC Lee, TC Chao, Lineal energy of proton in silicon by a microdosimetry simulation. Applied Sciences 2021, 11 , 1113 期刊 Journal Paper, 趙自強 Dr. Chao TC Y Chiang, CM Tan, CJ Tung, CC Lee, TC Chao, Lineal energy of proton in silicon by a microdosimetry simulation. Applied Sciences 2021, 11 , 1113 閱讀全文 »
The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design 閱讀全文 »
Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors 期刊 Journal Paper Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors 閱讀全文 »
