The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design

Chong Rong Huang, Chia-hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, , Hsien-Chin Chiu, Chih-Tien Chen, Kuo-Jen Chang, “The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design, ” Electronics, vol. 10, no. 1, 2021, pp.46. 2021/1/1