Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate

H.-C. Chiu, L.-Y. Peng, H.-C. Wang, H.-L. Kao, H.-Y. Wang, J.-I. Chyi, “Improved Reverse Recovery Characteristics of InAlN/GaN Schottky Barrier Diode Using a SOI Substrate,” Semiconductor Science and Technology, vol. 32, no. 10, 2017, pp. 105009. 2017/10/1