High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator

H.-C. Chiu, H.-C. Wang, C.-R. Huang, H.-L. Kao, F.-T. Chien, “High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator, ” Energies, 2020. 2020/5/1