High-Performance Normally-off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

H.-C. Chiu, Y.-S. Chag, B.-H. Li, H.-C. Wang, H.-L. Kao, Chih-Wei Hu, Rong Xuan, “High-Performance Normally-off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design,” IEEE Journal of the Electron Devices Society, vol. 6, 2018, pp. 201-206. 2018/6/1