Dynamics Study of the physical processes in the Intrinsic line electromigration of deep-submicron copper and aluminum interconnects

C. M. Tan, G. Zhang, and Z. Gan. “Dynamics Study of the physical processes in the Intrinsic line electromigration of deep-submicron copper and aluminum interconnects,” IEEE Transactions on Device and Materials Reliability, vol. 4, no. 3, pp. 450-456, 2004
https://ieeexplore.ieee.org/abstract/document/1369207