Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects

W. Li, C. M. Tan, and N. Raghavan. “Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects,” Journal of Applied Physics, vol. 105, no. 1, pp. 014305, 2009
https://aip.scitation.org/doi/full/10.1063/1.3040159