Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

H.-C. Chiu, C.-H. Liu, Y.-S. Chang, H.-L. Kao, R. Xuan, C.-W. Hu, F.-T. Chien, “Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process,” IEEE Journal of the Electron Devices Society, vol.7, 2019, pp. 984-989. 2019/7/1