Comparison of SOI and PSOI LDMOS using electrical-thermal-stress coupled field modeling

C. M. Tan and G. Huang. “Comparison of SOI and PSOI LDMOS using electrical-thermal-stress coupled field modeling,” IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3494-500, Oct. 2011.
https://ieeexplore.ieee.org/abstract/document/5995159