The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design 閱讀全文 »
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region 閱讀全文 »
A Fully Inkjet-Printed Strain Sensor Based on Carbon Nanotubes 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling A Fully Inkjet-Printed Strain Sensor Based on Carbon Nanotubes 閱讀全文 »
High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling High Threshold Voltage Normally-off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-rich LPCVD-SiNx Gate Insulator 閱讀全文 »
AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate Under Uniaxial Tensile Strain 閱讀全文 »
Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Mechanical Tensile Strain for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on a Silicon-on-Insulator Substrate 閱讀全文 »
Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Analysis of the Back-barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-standing GaN Substrates 閱讀全文 »
On-Chip GaN-on-SiC VCO Using a Tunable Substrate Integrated Waveguide Loaded With Complementary Split Ring Resonator 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling On-Chip GaN-on-SiC VCO Using a Tunable Substrate Integrated Waveguide Loaded With Complementary Split Ring Resonator 閱讀全文 »
Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process 閱讀全文 »
The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques 期刊 Journal Paper, 高瑄苓 Dr. Kao,Hsuan-Ling The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques 閱讀全文 »
